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IRL7472L1PBF Datasheet(PDF) 3 Page - International Rectifier |
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IRL7472L1PBF Datasheet(HTML) 3 Page - International Rectifier |
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3 / 11 page  IRL7472L1TRPbF 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 25, 2015 D S G Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 232 ––– ––– S VDS = 10V, ID = 195A Qg Total Gate Charge ––– 220 330 nC ID = 195A Qgs Gate-to-Source Charge ––– 95 ––– VDS = 20V Qgd Gate-to-Drain ("Miller") Charge ––– 87 ––– VGS = 4.5V Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 133 ––– ID = 195A, VDS =0V, VGS = 4.5V td(on) Turn-On Delay Time ––– 68 ––– ns VDD = 20V tr Rise Time ––– 176 ––– ID = 30A td(off) Turn-Off Delay Time ––– 174 ––– RG = 2.7 tf Fall Time ––– 137 ––– VGS = 4.5V Ciss Input Capacitance ––– 20082 ––– pF VGS = 0V Coss Output Capacitance ––– 2436 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 1594 ––– ƒ = 10kHz Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 2855 ––– VGS = 0V, VDS = 0V to 32V Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 3544 ––– VGS = 0V, VDS = 0V to 32V Notes: Package limit current based on source connection technology Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.016mH, RG = 50, IAS = 195A, VGS =10V. ISD ≤ 195A, di/dt ≤ 984A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 39A, VGS =10V. Silicon limit current based on maximum allowable junction temperature TJmax. Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 341 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 1500 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ= 25°C, IS =195A, VGS = 0V dv/dt Peak Diode Recovery ––– 1.3 ––– V/ns TJ =175°C, IS =195A, VDS = 40V trr Reverse Recovery Time ––– 57 ––– ns TJ = 25° C VR = 34V, ––– 58 ––– TJ = 125°C IF = 195A Qrr Reverse Recovery Charge ––– 103 ––– nC TJ = 25°C di/dt = 100A/µs ––– 114 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 3.1 ––– A TJ = 25°C |
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