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BYC5D-500 Datasheet(PDF) 5 Page - NXP Semiconductors

Part # BYC5D-500
Description  BYC5D-500_15
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYC5D-500 Datasheet(HTML) 5 Page - NXP Semiconductors

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BYC5D-500
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 6 July 2011
5 of 11
NXP Semiconductors
BYC5D-500
Hyperfast power diode
6.
Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VF
forward voltage
IF =10A; Tj =150 °C; see Figure 5
-1.4
1.7
V
IF =5A; Tj = 25 °C; see Figure 5
-1.5
2
V
IF =5A; Tj = 150 °C; see Figure 5
-
1.15
1.45
V
IR
reverse current
VR =500 V
-
9
40
µA
VR =500 V; Tj = 100 °C
-
0.9
3
mA
Dynamic characteristics
trr
reverse recovery time
IF =1A; VR =30V; dIF/dt = 50 A/µs;
Tj =25°C; see Figure 6
-
1530ns
IF =5A; VR = 400 V; dIF/dt = 500 A/µs;
Tj =25°C; see Figure 6
-16
-ns
IRM
peak reverse recovery
current
IF =5A; VR = 400 V; dIF/dt = 50 A/µs;
Tj = 125 °C; see Figure 6
-0.9
3
A
IF =5A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 100 °C; see Figure 6
-9.5
11
A
VFR
forward recovery
voltage
IF =5A; dIF/dt = 100 A/µs; Tj =25°C;
see Figure 7
-9
11
V
Fig 5.
Forward current as a function of forward
voltage
Fig 6.
Reverse recovery definitions; ramp recovery
003aag304
VF (V)
03
2
1
4
6
2
8
10
IF
(A)
0
(1)
(2)
(3)
003aac562
trr
time
100 %
25 %
IF
dlF
dt
IR
IRM
Qr


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