Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient

ƒ

75

100

°C/W

Thermal Resistance

Parameter

Max.

Units

Drain- Source Voltage

-12

V

-4.3

-3.4

A

Pulsed Drain Current



-34

Power Dissipation

1.3

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

Single Pulse Avalanche Energy

„

33

mJ

Gate-to-Source Voltage

± 8.0

V

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

W

These P-Channel MOSFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device

designer with an extremely efficient and reliable device for use in battery and

load management.

A thermally enhanced large pad leadframe has been incorporated into the

standard SOT-23 package to produce a HEXFET Power MOSFET with the

industry's smallest footprint. This package, dubbed the Micro3

™, is ideal for

applications where printed circuit board space is at a premium. The low profile

(<1.1mm) of the Micro3 allows it to fit easily into extremely thin application

environments such as portable electronics and PCMCIA cards. The thermal

resistance and power dissipation are the best available

.

Description

Micro3

™

S

G 1

2

D

3

IRLML6401PbF

1

Submit Datasheet Feedback

April 28, 2014

Form

Quantity

IRLML6401TRPbF

Micro3™ (SOT-23)

Tape and Reel

3000

IRLML6401TRPbF

Package Type

Standard Pack

Orderable Part Number

Base Part Number