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BYC5X-600P Datasheet(PDF) 6 Page - NXP Semiconductors |
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BYC5X-600P Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 11 page NXP Semiconductors BYC5X-600P Hyperfast power diode BYC5X-600P All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 24 December 2014 6 / 11 11. Characteristics Table 8. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IF = 5 A; Tj = 25 °C; Fig. 6 - 2.5 3.3 V VF forward voltage IF = 5 A; Tj = 150 °C; Fig. 6 - 1.35 2.1 V VR = 600 V; Tj = 25 °C - - 10 µA IR reverse current VR = 600 V; Tj = 150 °C - - 0.6 mA Dynamic characteristics IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 25 °C; Fig. 7 - 19 - nC Qr recovered charge IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 125 °C; Fig. 7 - 45 - nC IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C; Fig. 7 - 11 - ns - 23 - ns IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 25 °C; Fig. 7 - 28 - ns trr reverse recovery time IF = 5 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; Fig. 7 - 13 25 ns IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 25 °C; Fig. 7 - 1.7 - A IRM peak reverse recovery current IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 125 °C; Fig. 7 - 3.2 - A |
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