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BYV410-600 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BYV410-600 Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 11 page 1. Product profile 1.1 General description Dual enhanced ultrafast power diode in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits High thermal cycling performance Low on state losses Low thermal resistance Soft recovery characteristic minimizes power consuming oscillations 1.3 Applications Dual mode (DCM and CCM) PFC Power Factor Correction (PFC) for Interleaved Topology 1.4 Quick reference data BYV410-600 Dual enhanced ultrafast power diode Rev. 2 — 5 August 2011 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VRRM repetitive peak reverse voltage - - 600 V IO(AV) average output current square-wave pulse; δ =0.5 ; Tmb ≤ 92 °C; both diodes conducting; see Figure 1; see Figure 2 -- 20 A Static characteristics VF forward voltage IF =10A; Tj =150 °C - 1.3 1.9 V IF =10A; Tj =25°C; see Figure 4 -1.4 2.1 V Dynamic characteristics trr reverse recovery time IF =1A; VR =30V; dIF/dt = 100 A/µs; Tj =25°C; see Figure 5 - 2035ns Qr recovered charge IF =1A; VR =30V; dIF/dt = 100 A/µs - 1528nC |
Similar Part No. - BYV410-600_15 |
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Similar Description - BYV410-600_15 |
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