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TO293BN-RXYZ Datasheet(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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TO293BN-RXYZ Datasheet(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED |
2 / 6 page 2 Electro-Optical Characteristics for TO293BN-RXYZ 1310 nm DFB TO-Can Parameters tested at 25 °C, data for extended temperature range is based on product characterization results for reference only. Parameter Symbol Test Conditions Min. Typ. Max. Unit Threshold Current Ith CW, T = 25 °C 812 mA T = 85 °C 25 30 Slope Efficiency η CW, T = 25 °C 0.2 0.25 W/A T = 85 °C 0.12 0.18 Optical Output Power Pf If = 30 mA 3.2 5.0 mW Forward Voltage Vf If = 30 mA 1.3 1.6 V If = 30 mA with Matching R 1.9 3 Series Resistance R Without Matching R 5 Ω With Matching R 12 30 Kink Current Iknk Ith to 100 mA 70 mA Wavelength λ CW, If = 30 mA 1290 1310 1330 nm Side Mode Suppression Ratio SMSR CW, If = 30 mA 30 40 dB Monitor Output Current Im If = 30 mA 100 1000 μA Monitor Dark Current Id VrP = 5 V, not in black box 100 nA Product Characteristics of Chip-on-Carrier or Package at 25 °C Parameter Symbol Test Conditions Min. Typ. Max. Unit Wavelength/Temperature Coefficient Dλ/dT T = –5 °C to 85 °C 0.09 nm/°C Relative Intensity Noise RIN If = 30mA, 50 MHz – 12 GHz –140 dB/Hz Bandwidth BW Ith + 36 mA 9 GHz Rise Time τr Unfiltered 20 – 80%; ER = 5 dB 35 Ps Fall Time τf Unfiltered; 80 – 20%; ER = 5 dB 45 Ps Monitor Capacitance C VrP = 5V, f = 1 MHz 5 7 pF Notes: Pf = Light from the TO If = Forward current Vf = Forward voltage VrP = Reversed bias for photo diode Absolute Maximum Ratings Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operations sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Parameter Unit Min. Max. Forward Current mA 150 Front Power mW 20 Reverse Voltage (Laser Diode) V 2 Reverse Voltage (Photo Diode) V 20 Forward Current (Photo Diode) mA 10 Operating Temperature °C –40 85 Storage Temperature °C –40 100 Storage Relative Humidity % 85 |
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