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IRF5NJZ48 Datasheet(PDF) 1 Page - International Rectifier

Part # IRF5NJZ48
Description  Avalanche Energy Ratings
Download  7 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF5NJZ48 Datasheet(HTML) 1 Page - International Rectifier

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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 10V, TC = 25°C
Continuous Drain Current
22*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
22*
IDM
Pulsed Drain Current ➀
88
PD @ TC = 25°C
Max. Power Dissipation
75
W
Linear Derating Factor
0.60
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
160
mJ
IAR
Avalanche Current ➀
22
A
EAR
Repetitive Avalanche Energy ➀
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt ➂
3.6
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Package Mounting Surface Temperature
300 (for 5 s)
Weight
1.0
g
Fifth Generation HEXFET®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
oC
A
11/10/00
www.irf.com
1
55V, N-CHANNEL
SMD-0.5
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRF5NJZ48
55V
0.016
22A*
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
For footnotes refer to the last page
* Current is limited by package
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRF5NJZ48
PD - 94034


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