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74LVTN16245B Datasheet(PDF) 6 Page - NXP Semiconductors

Part # 74LVTN16245B
Description  3.3 V 16-bit transceiver; 3-state
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74LVTN16245B Datasheet(HTML) 6 Page - NXP Semiconductors

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74LVTN16245B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 5 April 2012
6 of 17
NXP Semiconductors
74LVTN16245B
3.3 V 16-bit transceiver; 3-state
5.2 Pin description
6.
Functional description
[1]
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
7.
Limiting values
Table 2.
Pin description
Symbol
Pin
Description
SOT362-1
SOT1134-2
1DIR, 2DIR
1, 24
A30, A13
direction control input
1B0 to 1B7
2, 3, 5, 6, 8, 9, 11, 12
B20, A31, D5, D1, A2, B2, B3,
A5
data input/output
2B0 to 2B7
13, 14, 16, 17, 19, 20, 22, 23
A6, B5, B6, A9, D2, D6, A12, B8 data input/output
GND
4, 10, 15, 21, 28, 34, 39, 45
A32, A3, A8, A11, A16, A19,
A24, A27
ground (0 V)
VCC
7, 18, 31, 42
A1, A10, A17, A26
supply voltage
1OE, 2OE
48, 25
A29, A14
output enable input (active LOW)
2A0 to 2A7
36, 35, 33, 32, 30, 29, 27, 26
A21, B13, B12, A18, D3, D7,
A15, B10
data input/output
1A0 to 1A7
47, 46, 44, 43, 41, 40, 38, 37
B18, A28, D8, D4, A25, B16,
B15, A22
data input/output
n.c.
-
A4, A7, A20, A23, B1, B4, B7,
B9, B11, B14, B17, B19
not connected
Table 3.
Function table [1]
Control
Input/output
nOE
nDIR
nAn
nBn
L
L
output nAn = nBn
input
L
H
input
output nBn = nAn
HX
Z
Z
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
0.5
+4.6
V
VI
input voltage
[1]
0.5
+7.0
V
VO
output voltage
output in OFF-state or
HIGH-state
[1]
0.5
+7.0
V
IIK
input clamping current
VI < 0 V
50
-
mA
IOK
output clamping current
VO < 0 V
50
-
mA
IO
output current
output in LOW-state
-
128
mA
output in HIGH-state
64
-
mA
Tstg
storage temperature
65
+150
C
Tj
junction temperature
[2] -
150
C


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