1.

Product profile

1.1 General description

135 W LDMOS power transistor for base station applications at frequencies from

700 MHz to 1000 MHz.

[1]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier

spacing 5 MHz.

1.2 Features

Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a

Average output power = 26.5 W

Power gain = 21.0 dB

Efficiency = 28.0 %

ACPR =

−39 dBc

Easy power control

Integrated ESD protection

Enhanced ruggedness

High efficiency

Excellent thermal stability

Designed for broadband operation (700 MHz to 1000 MHz)

Internally matched for ease of use

Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

BLF6G10-135RN;

BLF6G10LS-135RN

Power LDMOS transistor

Rev. 02 — 21 January 2010

Product data sheet

Table 1.

Typical performance

Mode of operation

f

η

D

ACPR

(MHz)

(V)

(W)

(dB)

(%)

(dBc)

2-carrier W-CDMA

869 to 894

28

26.5

21.0

28.0

−39[1]

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.