BLF6G10-200RN_10LS-200RN_2

© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 02 — 21 January 2010

4 of 11

NXP Semiconductors

BLF6G10(LS)-200RN

Power LDMOS transistor

7.2 One-tone CW

7.3 Two-tone CW

Fig 1.

One-tone CW power gain and drain efficiency as function of load power;

typical values

0

200

160

80

120

40

001aaj415

17

19

21

(dB)

(%)

15

20

40

60

0

Fig 2.

Two-tone CW power gain and drain efficiency

as function of peak envelope load power;

typical values

Fig 3.

Two-tone CW intermodulation distortion as a

function of peak envelope load power; typical

values

0

360

240

120

001aaj416

17

19

21

(dB)

(%)

15

20

40

60

0

001aah520

0

180

120

60

−40

−50

−30

−20

IMD

(dBc)

−60

IMD3

IMD5

IMD7