BLF6G15L-40RN_15 datasheet(5/12 Pages) PHILIPS

Part #	BLF6G15L-40RN

Description	Power LDMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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BLF6G15L-40RN_6G15LS-40RN

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Product data sheet

Rev. 2 — 14 May 2012

5 of 12

NXP Semiconductors

BLF6G15L(S)-40RN

Power LDMOS transistor

8.3 2-Carrier W-CDMA graphs

3GPP, test model 1; 64 DPCH, PAR = 8.4 dB at 0.01 % probability, 5 MHz carrier spacing.

Tamb = 25 C.

(1) Gp at f = 1475 MHz

(2) Gp at f = 1493 MHz

(3) Gp at f = 1511 MHz

(4)



D at f = 1475 MHz

(5)



D at f = 1493 MHz

(6)



D at f = 1511 MHz

Tamb = 25 C.

(1) ACPR5M at f = 1475 MHz

(2) ACPR5M at f = 1493 MHz

(3) ACPR5M at f = 1511 MHz

(4) ACPR10M at f = 1475 MHz

(5) ACPR10M at f = 1493 MHz

(6) ACPR10M at f = 1511 MHz

Fig 3.

Power gain and drain efficiency as function of

load power; typical values

Fig 4.

Adjacent channel power ratio (5 MHz and

10 MHz) as a function of load power; typical

values

DDD

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BLF6G15L-40RN Datasheet(PDF) 5 Page - NXP Semiconductors

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