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BLF6G21-10G Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BLF6G21-10G
Description  Power LDMOS transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLF6G21-10G Datasheet(HTML) 3 Page - NXP Semiconductors

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BLF6G21-10G
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 11 April 2013
3 of 12
NXP Semiconductors
BLF6G21-10G
Power LDMOS transistor
5.
Thermal characteristics
[1]
Thermal resistance is determined under specified RF operating conditions
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLF6G21-10G is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =28V;
f = 2140 MHz at PL =10W.
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-case) thermal resistance from junction to case Tcase = 80 C; PL(AV) =11 W
[1] 3.2
K/W
Table 6.
Characteristics
Tj = 25 C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS
drain-source breakdown voltage
VGS =0V; ID =0.5 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID =18mA
1.4
1.9
2.4
V
IDSS
drain leakage current
VGS =0V; VDS = 28 V
--1.5
A
IDSX
drain cut-off current
VGS =VGS(th) + 3.75 V; VDS =10V
-
3.1
-
A
IGSS
gate leakage current
VGS =11V; VDS = 0 V
--150
nA
gfs
forward transconductance
VDS =10V; ID =0.9 A
-
0.5
-
S
RDS(on)
drain-source on-state resistance
VGS =VGS(th) + 3.75 V; ID = 0.625 A
-
0.4
-
Crs
feedback capacitance
VGS =0V; VDS =28V; f=1MHz
-
0.5
-
pF
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP
test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 28 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL(AV) = 0.7 W
-
18.5
-
dB
D
drain efficiency
PL(AV) = 0.7 W
-
15
-
%
ACPR
adjacent channel power ratio
PL(AV) = 0.7 W
-
50
-
dBc
Table 8.
Application information
Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP
test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2167.5 MHz; RF performance at VDS =28V;
IDq = 100 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL(AV) = 2 W
17.3
19.3
-
dB
D
drain efficiency
PL(AV) = 2 W
29
31
-
%
ACPR
adjacent channel power ratio
PL(AV) = 2 W
-
39
36
dBc


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