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BLF6G21-10G Datasheet(PDF) 3 Page - NXP Semiconductors |
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BLF6G21-10G Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page BLF6G21-10G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 — 11 April 2013 3 of 12 NXP Semiconductors BLF6G21-10G Power LDMOS transistor 5. Thermal characteristics [1] Thermal resistance is determined under specified RF operating conditions 6. Characteristics 7. Application information 7.1 Ruggedness in class-AB operation The BLF6G21-10G is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS =28V; f = 2140 MHz at PL =10W. Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 C; PL(AV) =11 W [1] 3.2 K/W Table 6. Characteristics Tj = 25 C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS =0V; ID =0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID =18mA 1.4 1.9 2.4 V IDSS drain leakage current VGS =0V; VDS = 28 V --1.5 A IDSX drain cut-off current VGS =VGS(th) + 3.75 V; VDS =10V - 3.1 - A IGSS gate leakage current VGS =11V; VDS = 0 V --150 nA gfs forward transconductance VDS =10V; ID =0.9 A - 0.5 - S RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75 V; ID = 0.625 A - 0.4 - Crs feedback capacitance VGS =0V; VDS =28V; f=1MHz - 0.5 - pF Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 0.7 W - 18.5 - dB D drain efficiency PL(AV) = 0.7 W - 15 - % ACPR adjacent channel power ratio PL(AV) = 0.7 W - 50 - dBc Table 8. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2167.5 MHz; RF performance at VDS =28V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 2 W 17.3 19.3 - dB D drain efficiency PL(AV) = 2 W 29 31 - % ACPR adjacent channel power ratio PL(AV) = 2 W - 39 36 dBc |
Similar Part No. - BLF6G21-10G_15 |
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