IRFNG50

2

www.irf.com

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

1000

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

1.4

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

2.0

VGS = 10V, ID = 3.5A

Resistance

—

—

2.25

VGS = 10V, ID = 5.5A

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

5.2

—

—

S ( )VDS > 15V, IDS = 3.5A ➃

IDSS

Zero Gate Voltage Drain Current

—

—

25

VDS= 800V ,VGS=0V

—

—

250

VDS = 800V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

200

VGS =10V, ID =5.5A

Qgs

Gate-to-Source Charge

—

—

20

nC

VDS = 400V |

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

110

Turn-On Delay Time

—

—

30

VDD = 400V, ID = 5.5A,

tr

Rise Time

—

—

44

VGS =10V, RG = 2.35Ω |

Turn-Off Delay Time

—

—

210

tf

Fall Time

—

—

60

LS + LD

Total Inductance

—

4.0

—

Ciss

Input Capacitance

—

2400

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

240

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

80

—

nA

➃

nH

ns

µA

For footnotes refer to the last page

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

0.83

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

5.5

ISM

Pulse Source Current (Body Diode)

➀

——

22

VSD

Diode Forward Voltage

—

—

1.8

V

trr

Reverse Recovery Time

—

—

1200

nS

Tj = 25°C, IF = 5.5A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

8.4

µC

VDD ≤ 50V ➃

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Measured from the center of drain

Ω