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IRG4MC50U Datasheet(PDF) 1 Page - International Rectifier |
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IRG4MC50U Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page IRG4MC50U INSULATED GATE BIPOLAR TRANSISTOR E C G n-channel Features Benefits VCES = 600V VCE(on) max = 2.25V @VGE = 15V, IC = 27A Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 35* IC @ TC = 100°C Continuous Collector Current 27 A ICM Pulsed Collector Current ➀ ➀ ➀ ➀ ➀ 140 ILM Clamped Inductive Load Current ➁ ➁ ➁ ➁ ➁ 140 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 150 W PD @ TC = 100°C Maximum Power Dissipation 60 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Lead Temperature 300 (0.063in./1.6mm from case for 10s) Weight 9.3 (typical) g Absolute Maximum Ratings 02/08/02 www.irf.com 1 UltraFast Speed IGBT • Electrically Isolated and Hermetically Sealed • Simple Drive Requirements • Latch-proof • Fast Speed operation 3 kHz - 8 kHz • High operating frequency • Switching-loss rating includes all "tail" losses • Ceramic eyelets • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- current applications. TO-254AA Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 0.83 °C/W PD -94273A |
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