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BLF7G27L-140 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BLF7G27L-140 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 14 page BLF7G27L-140_7G27LS-140 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 22 July 2011 3 of 14 NXP Semiconductors BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor 6. Characteristics 7. Test information Remark: All testing performed in a class-AB production test circuit. 7.1 Ruggedness in class-AB operation The BLF7G27L-140 and BLF7G27LS-140 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS =28V; IDq =1300mA; PL = 140 W (CW); f = 2500 MHz. Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS =0V; ID =1 mA 65 - - V VGS(th) gate-source threshold voltage VDS =10 V; ID = 216 mA 1.5 1.8 2.3 V IDSS drain leakage current VGS =0V; VDS =28V - - 5 A IDSX drain cut-off current VGS =VGS(th) +3.75 V; VDS =10V 34.2 40.5 - A IGSS gate leakage current VGS =11 V; VDS = 0 V - - 500 nA gfs forward transconductance VDS =10V; ID = 216 mA - 1.87 - S RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75 V; ID =7.56A -0.07 - Table 7. Functional test information Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288 MHz; f1 = 2500 MHz; f2 = 2700 MHz; RF performance at VDS =28V; IDq =1300mA; Tcase =25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PL(AV) average output power - 30 - W Gp power gain 15.3 16.5 - dB RLin input return loss - 10 - dB D drain efficiency 19 22 - % ACPR885k adjacent channel power ratio (885 kHz) 44 48 - dBc |
Similar Part No. - BLF7G27L-140_15 |
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Similar Description - BLF7G27L-140_15 |
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