Electronic Components Datasheet Search |
|
BLF8G09LS-400PW Datasheet(PDF) 7 Page - NXP Semiconductors |
|
BLF8G09LS-400PW Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 17 page BLF8G09LS-400PW_8G09LS-400PGW All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 4 — 28 July 2015 7 of 17 NXP Semiconductors BLF8G09LS-400P(G)W Power LDMOS transistor 7.5.2 IS-95 VDS = 28 V; IDq = 3400 mA. (1) f = 716 MHz (2) f = 722 MHz (3) f = 728 MHz VDS = 28 V; IDq = 3400 mA. (1) f = 716 MHz (2) f = 722 MHz (3) f = 728 MHz Fig 5. Power gain as a function of output power; typical values Fig 6. Drain efficiency as a function of output power; typical values VDS = 28 V; IDq = 3400 mA. (1) f = 716 MHz (2) f = 722 MHz (3) f = 728 MHz VDS = 28 V; IDq = 3400 mA. (1) f = 716 MHz (2) f = 722 MHz (3) f = 728 MHz Fig 7. Adjacent channel power ratio (885 kHz) as a function of output power; typical values Fig 8. Adjacent channel power ratio (1980 kHz) as a function of output power; typical values |
Similar Part No. - BLF8G09LS-400PW_15 |
|
Similar Description - BLF8G09LS-400PW_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |