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BLF8G10LS-300P Datasheet(PDF) 6 Page - NXP Semiconductors |
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BLF8G10LS-300P Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page BLF8G10LS-300P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 2 — 17 December 2013 6 of 13 NXP Semiconductors BLF8G10LS-300P Power LDMOS transistor 7.4.1 CW pulsed VDS =28V; IDq = 2000 mA; tp = 100 s: = 10 %. (1) f = 758 MHz (2) f = 780.5 MHz (3) f = 803 MHz VDS =28V; IDq = 2000 mA; tp = 100 s: = 10 %. (1) f = 758 MHz (2) f = 780.5 MHz (3) f = 803 MHz Fig 3. Power gain as a function of output power; typical values Fig 4. Drain efficiency as a function of output power; typical values VDS =28V; IDq = 2000 mA; tp = 100 s: = 10 %. (1) f = 758 MHz (2) f = 780.5 MHz (3) f = 803 MHz Fig 5. Input return loss as a function of output power; typical values |
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