BLF8G20LS-140V_15 datasheet(5/17 Pages) PHILIPS

5 / 17 page

BLF8G20LS-140V_20LS-140GV

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 2 — 7 October 2014

5 of 17

NXP Semiconductors

BLF8G20LS-140(G)V

Power LDMOS transistor

7.3 VBW in a class-AB operation

The BLF8G20LS-140V and BLF8G20LS-140GV show 150 MHz (typical) video bandwidth

(IMD third-order intermodulation inflection point) in a class-AB test circuit in the 1805 MHz

to 1880 MHz band at VDS = 28 V and IDq =900 mA.

VDS = 28 V; IDq = 900 mA; R1 =10 .

(1) low

(2) high

Fig 2.

VBW capacity in class-AB test circuit

Similar Part No. - BLF8G20LS-140V_15

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BLF8G20LS-160V	169Kb / 13P	Power LDMOS transistor Rev. 2-24 June 2014

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BLF6G20-110	74Kb / 9P	Power LDMOS transistor Rev. 01-28 January 2008
	BLF7G22L-130	180Kb / 15P	Power LDMOS transistor Rev. 3-18 November 2010
	BLF6G20-45	88Kb / 12P	Power LDMOS transistor Rev. 02-25 August 2008
	BLF6G20-110	90Kb / 10P	Power LDMOS transistor Rev. 03-13 January 2009
	BLF2425M7L140	299Kb / 11P	Power LDMOS transistor Rev. 3-6 September 2012
	BLF188XR	227Kb / 15P	Power LDMOS transistor Rev. 5-12 November 2013
	BLF6G22LS-130	87Kb / 11P	Power LDMOS transistor Rev. 01-23 May 2008
	BLF6G20LS-140	74Kb / 8P	Power LDMOS transistor Rev. 01-27 February 2009
	BLF7G10L-250	714Kb / 13P	Power LDMOS transistor Rev. 4-13 September 2012
	BLA6G1011-200R	185Kb / 13P	Power LDMOS transistor Rev. 5-17 March 2015
	BLP8G20S-80P	158Kb / 11P	Power LDMOS transistor Rev. 2-13 October 2014