BLF8G20LS-260A_15 datasheet(5/15 Pages) PHILIPS

Part #	BLF8G20LS-260A

Description	Power LDMOS transistor

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BLF8G20LS-260A

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Product data sheet

Rev. 4 — 12 July 2013

5 of 15

NXP Semiconductors

BLF8G20LS-260A

Power LDMOS transistor

[1]

ZS and ZL defined in Figure 1.

[2]

at 3 dB gain compression.

7.3 Recommended impedances for Doherty design

[1]

ZS and ZL defined in Figure 1.

[2]

at 3 dB gain compression.

[3]

at PL(AV) = 47 dBm.

[1]

ZS and ZL defined in Figure 1.

[2]

at 3 dB gain compression.

[3]

at PL(AV) = 47 dBm.

Maximum drain efficiency load

1810

0.8

 j3.7

2.6

 j2.6

176

67

18.1

1840

0.7

 j3.9

2.4

 j2.4

162

66

18.3

1880

0.7

 j4.0

2.3

 j2.5

163

65

18.4

Fig 1.

Definition of transistor impedance

Table 10.

Typical impedance of peak device …continued

Measured load-pull data of peak device; IDq = 1200 mA (peak); VDS = 28 V.

f

ZS[1]

ZL[1]

PL[2]



D

[2]

Gp[2]

(MHz)

(

)

(

)

(W)

(%)

(dB)

001aaf059

drain

ZL

ZS

gate

Table 11.

Typical impedance of main device at 1 : 1 load

Measured load-pull data of main device; IDq = 750 mA (main); VDS = 28 V.

f

ZS[1]

ZL[1]

PL[2]



D

[3]

Gp[3]

(MHz)

(

)

(

)

(dBm)

(%)

(dB)

1810

1.0

 j3.7

1.4

 j4.1

52.38

33.8

18.0

1840

1.0

 j3.9

1.4

 j3.8

52.23

34.3

18.1

1880

1.1

 j4.0

1.3

 j3.6

52.08

35.0

18.3

Table 12.

Typical impedance of main device at 1 : 2.5 load

Measured load-pull data of main device; IDq = 750 mA (main); VDS = 28 V.

f

ZS[1]

ZL[1]

PL[2]



D

[3]

Gp[3]

(MHz)

(

)

(

)

(dBm)

(%)

(dB)

1810

1.0

 j3.7

2.4

 j2.6

50.83

47.3

20.2

1840

1.0

 j3.9

2.8

 j3.0

50.47

50.2

20.8

1880

1.1

 j4.0

3.1

 j2.7

50.25

50.9

21.2

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