BLF8G22LS-140

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Product data sheet

Rev. 2 — 10 April 2013

4 of 12

NXP Semiconductors

BLF8G22LS-140

Power LDMOS transistor

7.3 Test circuit

[1]

American Technical Ceramics type 800B or capacitor of same quality.

[2]

Murata or capacitor of same quality.

Fig 1.

Definition of transistor impedance

001aaf059

drain

gate

Printed-Circuit Board (PCB): Rogers 4350B;



thickness copper plating = 35

m.

See Table 9 for a list of components.

Fig 2.

Component layout for class-AB production test circuit

Table 9.

List of components

For test circuit see Figure 2.

Component

Description

Value

Remarks

C1, C2, C3, C4, C5, C6

multilayer ceramic chip capacitor

9.7 pF

[1]

ATC800B

C7, C8, C9, C10

multilayer ceramic chip capacitor

1

F

[2]

Murata

C11, C12

multilayer ceramic chip capacitor

10

F

[2]

Murata

C13

electrolytic capacitor

470

F, 63 V

R1, R2

chip resistor

6.2



Vishay Dale

SMD 0805

DDD

%/)*B287387

%/)*B,1387

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5

&

5

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PP

PP

PP