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BLF8G22LS-200V Datasheet(PDF) 8 Page - NXP Semiconductors |
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BLF8G22LS-200V Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 16 page BLF8G22LS-200V_8G22LS-200GV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 10 December 2012 8 of 16 NXP Semiconductors BLF8G22LS-200(G)V Power LDMOS transistor 7.4.3 1-Carrier W-CDMA VDS = 28 V; IDq = 2000 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz VDS = 28 V; IDq = 2000 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 9. Peak-to-average power ratio as a function of average output power; typical values Fig 10. Peak output power as a function of average output power; typical values DDD 3/$9 G%P 3$5 3$5 3$5 G% G% G% DDD 3/$9 G%P 3/0 /0 3/0 G%P G%P G%P VDS = 28 V; IDq = 2000 mA. (1) f = 2112.5 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz VDS = 28 V; IDq = 2000 mA. (1) f = 2112.5 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz Fig 11. Power gain as a function of average output power; typical values Fig 12. Drain efficiency as a function of average output power; typical values DDD 3/$9 G%P *S *S G% G% G% DDD 3/$9 G%P ' ' |
Similar Part No. - BLF8G22LS-200V_15 |
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Similar Description - BLF8G22LS-200V_15 |
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