Electronic Components Datasheet Search |
|
BLF8G22LS-220 Datasheet(PDF) 6 Page - NXP Semiconductors |
|
BLF8G22LS-220 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page BLF8G22LS-220 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 — 30 May 2013 6 of 12 NXP Semiconductors BLF8G22LS-220 Power LDMOS transistor 7.4.3 1-Carrier W-CDMA VDS =28V; IDq = 1620 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz VDS =28V; IDq = 1620 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 5. Power gain and drain efficiency as function of output power; typical values Fig 6. Adjacent channel power ratio (5 MHz) as a function of output power; typical values VDS =28V; IDq = 1620 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 7. Peak-to-average ratio as a function of output power; typical values |
Similar Part No. - BLF8G22LS-220_15 |
|
Similar Description - BLF8G22LS-220_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |