BLF8G22LS-270_15 datasheet(1/14 Pages) PHILIPS

Part #	BLF8G22LS-270

Description	Power LDMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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1.

Product profile

1.1 General description

270 W LDMOS power transistor for base station applications at frequencies from

2110 MHz to 2170 MHz.

[1]

3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; 5 MHz carrier spacing.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low Rth providing excellent thermal stability

 Designed for broadband operation

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent pre-distortability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to

2170 MHz frequency range

BLF8G22LS-270

Power LDMOS transistor

Rev. 3 — 20 December 2012

Product data sheet

Table 1.

Typical performance

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Test signal

f

IDq

VDS

PL(AV)

Gp



D

ACPR5M

(MHz)

(mA)

(V)

(W)

(dB)

(%)

(dBc)

2-carrier W-CDMA

2110 to 2170

2400

28

80

17.7

30

29 [1]

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BLF8G22LS-270 Datasheet(PDF) 1 Page - NXP Semiconductors

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