Electronic Components Datasheet Search |
|
BLF8G27LS-100 Datasheet(PDF) 7 Page - NXP Semiconductors |
|
BLF8G27LS-100 Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 12 page BLF8G27LS-100 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 2 — 5 March 2014 7 of 12 NXP Semiconductors BLF8G27LS-100 Power LDMOS transistor 7.4.4 2-Carrier W-CDMA VDS =28V; IDq = 900 mA. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz VDS =28V; IDq = 900 mA. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz Fig 8. Power gain and drain efficiency as function of output power; typical values Fig 9. Adjacent power channel ratio (5 MHz) as a function of output power; typical values |
Similar Part No. - BLF8G27LS-100_15 |
|
Similar Description - BLF8G27LS-100_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |