BLF7G20L-200_15 datasheet(3/13 Pages) PHILIPS

Part #	BLF7G20L-200

Description	Power LDMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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BLF7G20L-200_7G20LS-200

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Product data sheet

Rev. 4 — 22 July 2011

3 of 13

NXP Semiconductors

BLF7G20L-200; BLF7G20LS-200

Power LDMOS transistor

6.

Characteristics

7.

Test information

7.1 Ruggedness in class-AB operation

The BLF7G20L-200 and BLF7G20LS-200 are capable of withstanding a load mismatch

corresponding to VSWR = 10 : 1 through all phases under the following conditions:

VDS =30V; IDq =1620mA; PL = 185 W (CW); f = 1805 MHz to 1880 MHz.

Table 6.

Characteristics

Tj = 25 C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; ID =1.5 mA

65

-

V

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 150 mA

1.5

1.9

2.3

V

IDSS

drain leakage current

VGS =0V; VDS = 28 V

--4.2

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10V

42

50.6

-

A

IGSS

gate leakage current

VGS =11V; VDS =0V

420 2.44

420

nA

gfs

forward transconductance

VDS =10V; ID = 7.5 A

-

18.6

-

S

RDS(on)

drain-source on-state resistance VGS =VGS(th) + 3.75 V;

ID =5.25A

-0.093 -



Table 7.

Functional test information

Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test

model 1; 64 PDPCH; f1 = 1807.5 MHz; f2 = 1812.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz;

RF performance at VDS =28V; IDq = 1620 mA; Tcase =25 C; unless otherwise specified; in a

class-AB production test circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

PL(AV)

average output power

-

55

-

W

Gp

power gain

PL(AV) =55W

17

18

-

dB

RLin

input return loss

PL(AV) =55W

-

10

dB



D

drain efficiency

PL(AV) =55W

30

33

-

%

ACPR

adjacent channel power ratio

PL(AV) =55W

-

29

-

dBc

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