BLF640_15 datasheet(3/12 Pages) PHILIPS

Part #	BLF640

Description	Broadband power LDMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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BLF640

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Product data sheet

Rev. 2 — 11 April 2013

3 of 12

NXP Semiconductors

BLF640

Broadband power LDMOS transistor

6.

Characteristics

7.

Test information

7.1 Ruggedness in class-AB operation

The BLF640 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1

through all phases under the following conditions: VDS = 28 V; f = 2140 MHz at PL =10W.

Table 6.

DC characteristics

Tj = 25 C unless otherwise specified

Symbol

Parameter

Conditions

Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage

VGS =0V; ID =0.5 mA

65

-

V

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 18 mA

1.4

1.9

2.4

V

IDSS

drain leakage current

VGS =0V; VDS =28V

-

1.5

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10V

-3.1

-

A

IGSS

gate leakage current

VGS =11V; VDS = 0 V

-

150

nA

gfs

forward transconductance

VDS =10V; ID =0.9 A

-

0.5

-

S

RDS(on)

drain-source on-state resistance

VGS =VGS(th) +3.75 V;

ID = 0.625 A

-0.4

-



Table 7.

AC characteristics

Tj = 25 C unless otherwise specified

Symbol

Parameter

Conditions

Min Typ Max Unit

Crs

feedback capacitance

VGS =0V; VDS =28V;

f= 1MHz

-0.5

-

pF

Table 8.

RF characteristics

PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; RF performance at VDS = 28 V; IDq = 100 mA;

Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Test signal: 2-carrier W-CDMA

f1 =2112.5MHz; f2 =2117.5MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz

Gp

power gain

PL(AV) = 0.7 W

-

18.5

-

dB



D

drain efficiency

PL(AV) = 0.7 W

-

15

-

%

ACPR

adjacent channel power ratio

PL(AV) = 0.7 W

-

50

-

dBc

Test signal: 1-carrier W-CDMA

f1 =2112.5MHz; f2 = 2167.5 MHz

Gp

power gain

PL(AV) = 2 W

17.3

19.3

-

dB



D

drain efficiency

PL(AV) = 2 W

29

31

-

%

ACPR

adjacent channel power ratio

PL(AV) = 2 W

-

39

36

dBc

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