BLF888D_BLF888DS

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© NXP Semiconductors N.V. 2014. All rights reserved.

Product data sheet

Rev. 2 — 27 June 2014

4 of 12

NXP Semiconductors

BLF888D; BLF888DS

UHF power LDMOS transistor

7.

Test information

7.1 Ruggedness in Doherty operation

The BLF888D and BLF888DS are capable of withstanding a load mismatch

corresponding to VSWR

 40 : 1 through all phases under the following conditions:

7.2 Test circuit

Printed-Circuit Board (PCB): RF-35;



thickness copper plating = 35

m, gold plated.

See Table 9 for a list of components.

Fig 1.

Component layout for production RF test circuit

Table 9.

List of components

For test circuit see Figure 1.

Component

Description

Value

Remarks

C1

multilayer ceramic chip capacitor 12 pF

[1]

C2, C3, C4, C5, C6 multilayer ceramic chip capacitor 8.2 pF

[1]

C7

multilayer ceramic chip capacitor 6.8 pF

[2]

C8

multilayer ceramic chip capacitor 4.7 pF

[2]

C9, C12, C13

multilayer ceramic chip capacitor 100 pF

[1]

C10, C11

multilayer ceramic chip capacitor 10 pF

[1]

C14, C15

multilayer ceramic chip capacitor 4.7

F, 50 V

C16, C17

multilayer ceramic chip capacitor 3.6 pF

[2]

C18, C19

multilayer ceramic chip capacitor 4.7

F, 50 V

C20, C21

electrolytic capacitor

470

F, 63 V