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MTB09P04DFP Datasheet(PDF) 4 Page - Cystech Electonics Corp.

Part # MTB09P04DFP
Description  P-Channel Enhancement Mode Power MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB09P04DFP Datasheet(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C877FP
Issued Date : 2015.07.06
Revised Date :
Page No. : 4/8
MTB09P04DFP
CYStek Product Specification
Typical Characteristics
Typical Output Characteristics
0
20
40
60
80
100
01
23
45
-VDS, Drain-Source Voltage(V)
-VGS=2V
10V,9V, 8V, 7V, 6V, 5V, 4V
3.5V
3V
2.5V
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-250μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
1
10
100
0.01
0.1
1
10
100
-ID, Drain Current(A)
-10V
-3V
-4.5V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
0
5
10
15
20
-IDR, Reverse Drain Current(A)
Tj=25°C
Tj=150°C
VGS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
20
40
60
80
100
120
140
160
180
200
02
4
6
8
10
Drain-Source On-State Resistance vs Junction Tempearture
0
0.4
0.8
1.2
1.6
2
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
VGS=-10V, ID=-25A
RDS(ON)@Tj=25°C : 6.1mΩ
-VGS, Gate-Source Voltage(V)
ID=-25A


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