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PMEG060V100EPD Datasheet(PDF) 4 Page - NXP Semiconductors

Part # PMEG060V100EPD
Description  60 V, 10 A low VF MEGA Schottky barrier rectifier
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PMEG060V100EPD Datasheet(HTML) 4 Page - NXP Semiconductors

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NXP Semiconductors
PMEG060V100EPD
60 V, 10 A low VF MEGA Schottky barrier rectifier
PMEG060V100EPD
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
22 January 2015
4 / 15
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1][2]
-
-
90
K/W
[1][3]
-
-
70
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1][4]
-
-
40
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
[5]
-
-
3
K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Soldering point of cathode tab.
aaa-014998
tp (s)
10-3
102
103
10
1
10-2
10-1
10
1
102
Zth(j-a)
(K/W)
10-1
0
0.25
0.2
0.1
0.05
0.02
0.01
duty cycle = 1
0.75
0.5
0.33
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values


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