NXP Semiconductors

PMEG2002ESF

20 V, 0.2 A low VF MEGA Schottky barrier rectifier

PMEG2002ESF

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Product data sheet

8 October 2013

3 / 13

Symbol

Parameter

Conditions

Min

Max

Unit

[3]

-

525

mW

[1]

-

950

mW

junction temperature

-

125

°C

ambient temperature

-55

125

°C

storage temperature

-65

150

°C

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode

9. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1][2]

-

-

310

K/W

[1][3]

-

-

190

K/W

thermal resistance

from junction to

ambient

in free air

[1][4]

-

-

105

K/W

thermal resistance

from junction to solder

point

[5]

-

-

40

K/W

[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode

[5] Soldering point of cathode tab.

aaa-006823

10

1

(K/W)

10

duty cycle =

1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0

0.02

0.01

FR4 PCB, standard footprint

Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values