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IRHNJ7330SE Datasheet(PDF) 1 Page - International Rectifier |
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IRHNJ7330SE Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 5.0 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 3.2 IDM Pulsed Drain Current ➀ 20 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 150 mJ IAR Avalanche Current ➀ 5.0 A EAR Repetitive Avalanche Energy ➀ 7.5 mJ dv/dt Peak Diode Recovery dv/dt ➂ 1.8 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 300 (for 5s) Weight 1.0 (Typical) g Pre-Irradiation oC A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) 02/07/03 www.irf.com 1 SMD-0.5 Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ7330SE 100K Rads (Si) 1.39 Ω 5.0A JANSR2N7465U3 Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Ceramic Package n Light Weight For footnotes refer to the last page IRHNJ7330SE JANSR2N7465U3 400V, N-CHANNEL REF: MIL-PRF-19500/676 RAD Hard ™ HEXFET ® TECHNOLOGY International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a de- cade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. PD - 93829B |
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