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IRHNJ67134 Datasheet(PDF) 1 Page - International Rectifier

Part # IRHNJ67134
Description  Simple Drive Requirements
Download  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRHNJ67134 Datasheet(HTML) 1 Page - International Rectifier

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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
19
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
12
IDM
Pulsed Drain Current
À
76
PD @ TC = 25°C
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
Á
60
mJ
IAR
Avalanche Current
À
19
A
EAR
Repetitive Avalanche Energy
À
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
Â
8.6
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
300 (for 5s)
Weight
1.0 (Typical)
g
°C
A
08/20/13
www.irf.com
1
For footnotes refer to the last page
Pre-Irradiation
Features:
n Low RDS(on)
n Fast Switching
n
Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n Surface Mount
n
Ceramic Package
n Light Weight
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
SMD-0.5
IRHNJ67134
RADIATION HARDENED
JANSR2N7589U3
POWER MOSFET
150V, N-CHANNEL
SURFACE MOUNT (SMD-0.5)
REF: MIL-PRF-19500/746
TECHNOLOGY
Product Summary
Part Number Radiation Level
RDS(on)
ID
QPL Part Number
IRHNJ67134
100K Rads (Si)
0.088
Ω 19A
JANSR2N7589U3
IRHNJ63134
300K Rads (Si)
0.088
Ω 19A
JANSF2N7589U3
n
ESD Rating: Class 2 per MIL-STD-750,
Method 1020
PD-96931C


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