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3

IRHNM57214SE

Pre-Irradiation

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-

ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Fig a. Typical Single Event Effect, Safe Operating Area

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

Up to 100K Rads (Si)

Units

Test Conditions

Min

Max

Drain-to-Source Breakdown Voltage

250

—

V

Gate Threshold Voltage

2.0

4.5

Gate-to-Source Leakage Forward

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

Zero Gate Voltage Drain Current

—

10

µA

Static Drain-to-Source

„

On-State Resistance (TO-3)

—

1.7

Ω

Static Drain-to-Source On-state

„

Diode Forward Voltage

„

—

1.0

V

Resistance (SMD-0.2)

—

1.7

Ω

…†

Radiation Characteristics

Ion

LET

Energy

Range

V

(MeV)

(µm)

@V

@V

@V

@V

Br

36.7

309

39.5

250

250

250

250

250

I

59.8

341

32.5

250

250

250

250

240

Au

82.3

350

28.4

250

250

225

175

50

Table 2. Typical Single Event Effect Safe Operating Area

0

50

100

150

200

250

300

0

-5

-10

-15

-20

VGS

Br

I

Au