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IRHNM57214SE Datasheet(PDF) 3 Page - International Rectifier |
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IRHNM57214SE Datasheet(HTML) 3 Page - International Rectifier |
3 / 9 page www.irf.com 3 IRHNM57214SE Pre-Irradiation International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil- ity. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Fig a. Typical Single Event Effect, Safe Operating Area Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter Up to 100K Rads (Si) Units Test Conditions Min Max BVDSS Drain-to-Source Breakdown Voltage 250 — V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.5 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 VGS = -20V IDSS Zero Gate Voltage Drain Current — 10 µA VDS = 200V, VGS = 0V RDS(on) Static Drain-to-Source On-State Resistance (TO-3) — 1.7 Ω VGS = 12V, ID = 2.4A RDS(on) Static Drain-to-Source On-state VSD Diode Forward Voltage — 1.0 V VGS = 0V, ID = 3.7A Resistance (SMD-0.2) — 1.7 Ω VGS = 12V, ID = 2.4A
Radiation Characteristics Ion LET Energy Range V DS (V) (MeV/(mg/cm2)) (MeV) (µm) @V GS=0V @VGS=-5V @V GS=-10V @V GS=-15V @V GS=-20V Br 36.7 309 39.5 250 250 250 250 250 I 59.8 341 32.5 250 250 250 250 240 Au 82.3 350 28.4 250 250 225 175 50 Table 2. Typical Single Event Effect Safe Operating Area 0 50 100 150 200 250 300 0 -5 -10 -15 -20 VGS Br I Au |
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