Absolute Maximum Ratings

Parameter

Units

ID @ VGS = -12V, TC = 25°C Continuous Drain Current

-3.1

ID @ VGS = -12V, TC = 100°C Continuous Drain Current

-2.0

IDM

Pulsed Drain Current



-12.4

PD @ TC = 25°C

Max. Power Dissipation

23

W

Linear Derating Factor

0.18

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

‚

28

mJ

IAR

Avalanche Current



-3.1

A

EAR

Repetitive Avalanche Energy



2.3

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

-21

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (for 5s)

Weight

0.25 (Typical)

g

°C

A

09/03/10

www.irf.com

1

For footnotes refer to the last page

Pre-Irradiation

SMD-0.2

(METAL LID)

RADIATION HARDENED

JANSR2N7506U8

POWER MOSFET

100V, P-CHANNEL

SURFACE MOUNT (SMD-0.2)

REF: MIL-PRF-19500/749

TECHNOLOGY

IRHNM597110

Refer to Page 10 for 1 Additional Part Number -

IRHNMC597110 (Ceramic Lid)

5

performance power MOSFETs for space applications. These

devices have been characterized for Single Event Effects

(SEE) with useful performance up to an LET of 80 (MeV/

charge reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages of

MOSFETs such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical parameters.

Features:

n

Complimentary N-Channel Available -

IRHNM57110, IRHNMC57110

Part Number

QPL Part Number

IRHNM597110

100K Rads (Si)

1.2

Ω

-3.1A JANSR2N7506U8

IRHNM593110

300K Rads (Si)

1.2

Ω

-3.1A JANSF2N7506U8

Product Summary

PD-97179B