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IRHSLNA57Z60 Datasheet(PDF) 1 Page - International Rectifier

Part # IRHSLNA57Z60
Description  Simple Drive Requirements
Download  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRHSLNA57Z60 Datasheet(HTML) 1 Page - International Rectifier

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03/30/04
RAD-HARD
IRHSLNA57Z60
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
www.irf.com
1
30V, N-CHANNEL
Features:
n Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
n Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
n Low Conduction Losses
n Low Switching Losses
n Low Vf Schottky Rectifier
n Refer to IRHSNA57Z60 for Lower Rds(on)
For footnotes refer to the last page
* Current is limited by package
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Product Summary
Part Number
Radiation Level RDS(on)
QG
IRHSLNA57Z60 100K Rads (Si)
4.0m
Ω 200nC
IRHSLNA53Z60 300K Rads (Si)
4.0m
Ω 200nC
IRHSLNA54Z60 600K Rads (Si)
4.0m
Ω 200nC
IRHSLNA58Z60 1000K Rads (Si)
4.5m
Ω 200nC
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25°C
Continuous Drain or Source Current
75*
ID @ VGS = 12V, TC = 100°C Continuous Drain or Source Current
75*
IDM
Pulsed Drain Current ➀
300
PD @ TC = 25°C
Max. Power Dissipation
250
W
Linear Derating Factor
2.0
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➃
500
mJ
IAR
Avalanche Current ➀
75
A
EAR
Repetitive Avalanche Energy ➀
25
mJ
IF (AV)@ TC = 25°C
Schottky and Body Diode Avg. Forward Current ➂
75*
IF (AV)@ TC =100°C
Schottky and Body Diode Avg. Forward Current ➂
75*
TJ, TSTG
Opeating and Storage Temperature Range
-55 to 150
Pckg. Mounting Surface Temp.
300 (for 5s)
Weight
3.3 (Typical)
g
Pre-Irradiation
A
A
°C
PD-94400B


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