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SI4410DYPBF Datasheet(PDF) 1 Page - International Rectifier |
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SI4410DYPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Parameter Max. Units VDS Drain- Source Voltage 30 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ±10 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ±8.0 A IDM Pulsed Drain Current ±50 PD @TA = 25°C Power Dissipation 2.5 PD @TA = 70°C Power Dissipation 1.6 Linear Derating Factor 0.02 W/°C dv/dt Peak Diode Recovery dv/dt 5.0 V/ns EAS Single Pulse Avalanche Energy 400 mJ VGS Gate-to-Source Voltage ± 20 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive l Lead-Free 09/22/04 Si4410DYPbF HEXFET® Power MOSFET Parameter Max. Units RθJA Maximum Junction-to-Ambient 50 °C/W Thermal Resistance This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on- resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. Description Absolute Maximum Ratings W www.irf.com 1 PD - 95168 SO-8 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A VDSS = 30V RDS(on) = 0.0135Ω |
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