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SI4420DYPBF Datasheet(PDF) 1 Page - International Rectifier |
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SI4420DYPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page Parameter Max. Units VDS Drain- Source Voltage 30 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ±12.5 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ±10 A IDM Pulsed Drain Current ±50 PD @TA = 25°C Power Dissipation 2.5 PD @TA = 70°C Power Dissipation 1.6 Linear Derating Factor 0.02 W/°C EAS Single Pulse Avalanche Energy 400 mJ VGS Gate-to-Source Voltage ± 20 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive l Lead-Free 8/11/04 Si4420DYPbF HEXFET® Power MOSFET Parameter Max. Units RθJA Maximum Junction-to-Ambient 50 °C/W Thermal Resistance This N-channel HEXFET® power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. VDSS = 30V RDS(on) = 0.009Ω Description Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A Absolute Maximum Ratings W www.irf.com 1 PD - 95729 SO-8 |
Similar Part No. - SI4420DYPBF_15 |
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Similar Description - SI4420DYPBF_15 |
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