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IRHYS597034CM Datasheet(PDF) 2 Page - International Rectifier |
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IRHYS597034CM Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRHYS597034CM, JANSR2N7520T3 Pre-Irradiation 2 www.irf.com For footnotes refer to the last page Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — -20 ISM Pulse Source Current (Body Diode) À — — -80 VSD Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -20A, VGS = 0V Ã trr Reverse Recovery Time — — 100 ns Tj = 25°C, IF =-20A, di/dt ≤ -100A/µs QRR Reverse Recovery Charge — — 200 nC VDD ≤ -25V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Note: Corresponding Spice and Saber models are available on International Rectifier Web site. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -60 — — V VGS = 0V, ID = -1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.066 — V/°C Reference to 25°C, ID = -1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.087 Ω VGS = -12V, ID = -13A Resistance VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -1.0mA gfs Forward Transconductance 10 — — S VDS = -15V, IDS = -13A Ã IDSS Zero Gate Voltage Drain Current — — -10 VDS= -48V ,VGS = 0V — — -25 VDS = -48V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V Qg Total Gate Charge — — 45 VGS = -12V, ID = -20A Qgs Gate-to-Source Charge — — 18 nC VDS = -30V Qgd Gate-to-Drain (‘Miller’) Charge — — 13 td(on) Turn-On Delay Time — — 25 VDD = -30V, ID = -20A tr Rise Time — — 65 VGS = -12V, RG = 7.5Ω td(off) Turn-Off Delay Time — — 75 tf Fall Time — — 50 LS + LD Total Inductance — 6.8 — Measured from Drain lead (6mm / 0.25in. from package) to Source lead ( 6mm /0.25in. from package) Ciss Input Capacitance — 1560 — VGS = 0V, VDS = - 25V Coss Output Capacitance — 565 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 62 — Rg Internal Gate Resistance — 6.5 — Ω f = 1.0MHz, open drain nA Ã nH ns µA Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 1.67 RthJA Junction-to-Ambient — — 80 Typical Socket Mount °C/W |
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