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PMEG2020EPK Datasheet(PDF) 2 Page - NXP Semiconductors |
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PMEG2020EPK Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 15 page NXP Semiconductors PMEG2020EPK 20 V, 2 A low VF MEGA Schottky barrier rectifier PMEG2020EPK All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved Product data sheet 10 February 2014 2 / 15 Symbol Parameter Conditions Min Typ Max Unit IR reverse current VR = 10 V; Tj = 25 °C - 70 350 µA Dynamic characteristics trr reverse recovery time IR = 0.5 A; IF = 0.5 A; IR(meas) = 0.1 A; Tj = 25 °C - 5 - ns [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode[1] 2 A anode 1 2 Transparent top view DFN1608D-2 (SOD1608) sym001 1 2 [1] The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Package Type number Name Description Version PMEG2020EPK DFN1608D-2 DFN1608D-2: leadless ultra small plastic package; 2 terminals SOD1608 |
Similar Part No. - PMEG2020EPK_15 |
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Similar Description - PMEG2020EPK_15 |
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