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CSD13302W Datasheet(PDF) 6 Page - Texas Instruments |
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CSD13302W Datasheet(HTML) 6 Page - Texas Instruments |
6 / 15 page VDS - Drain-To-Source Voltage (V) 0.1 1 10 50 0.1 1 10 100 D010 100 ms 10 ms 1 ms 100 µs 10 µs TC - Case Temperature (GC) -45 -20 5 30 55 80 105 130 155 180 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 D011 TC - Case Temperature (GC) -75 -50 -25 0 25 50 75 100 125 150 175 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 D008 VGS = 2.5 V VGS = 4.5 V VSD - Source-To-Drain Voltage (V) 0 0.2 0.4 0.6 0.8 1 0.0001 0.001 0.01 0.1 1 10 D009 TC = 25GC TC = 125GC CSD13302W SLPS535 – MARCH 2015 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) ID = 1 A Figure 9. Typical Diode Forward Voltage Figure 8. Normalized On-State Resistance vs Temperature Single Pulse, Max RθJA = 275°C/W Figure 10. Maximum Safe Operating Area Figure 11. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD13302W |
Similar Part No. - CSD13302W_15 |
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Similar Description - CSD13302W_15 |
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