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P0095-01

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CSD17575Q3

SLPS489A – JUNE 2014 – REVISED AUGUST 2014

CSD17575Q3 30-V N-Channel NexFET™ Power MOSFET

1 Features

Product Summary

1

•

TYPICAL VALUE

UNIT

•

Drain-to-Source Voltage

30

V

•

Low Thermal Resistance

Gate Charge Total (4.5V)

23

nC

Gate Charge Gate-to-Drain

5.4

nC

•

Avalanche Rated

2.6

•

Pb Free Terminal Plating

Drain-to-Source On-

m

Ω

Resistance

1.9

•

RoHS Compliant

Threshold Voltage

1.4

V

•

Halogen Free

•

SON 3.3 mm × 3.3 mm Plastic Package

.

Ordering Information(1)

2 Applications

Device

Media

Qty

Package

Ship

CSD17575Q3

13-Inch Reel

2500

•

Point of Load Synchronous Buck Converter for

SON 3.3 × 3.3 mm

Tape and

Plastic Package

Reel

CSD17575Q3T

13-Inch Reel

250

Applications in Networking, Telecom, and

Computing Systems

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

•

Optimized for Synchronous FET Applications

Absolute Maximum Ratings

3 Description

VALUE

UNIT

This 1.9 m

Ω, 30 V, SON 3×3 NexFET™ power

Drain-to-Source Voltage

30

V

MOSFET is designed to minimize losses in power

Gate-to-Source Voltage

±20

V

conversion applications.

Continuous Drain Current (Package Limit)

60

Top View

Continuous Drain Current (Silicon Limit),

182

A

Continuous Drain Current(1)

27

Pulsed Drain Current(2)

240

A

Power Dissipation(1)

2.8

W

108

Operating Junction and

–55 to 150

°C

Storage Temperature Range

Avalanche Energy, single pulse

115

mJ

thick FR4 PCB.

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.