0

3

6

9

12

15

18

0

2

4

6

8

10

D004

0

2

4

6

8

10

12

14

16

18

20

0

4

8

12

16

20

24

28

D007

1

D

2

D

3

D

4

D

D

5

G

6

S

7

S

8

S

P0093-01

Product

Folder

Sample &

Buy

Technical

Documents

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Software

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CSD17578Q5A

SLPS526 – MARCH 2015

CSD17578Q5A 30 V N-Channel NexFET™ Power MOSFETs

1 Features

Product Summary

1

•

TYPICAL VALUE

UNIT

•

Drain-to-Source Voltage

30

V

•

Low Thermal Resistance

Gate Charge Total (4.5 V)

7.9

nC

Gate Charge Gate-to-Drain

2.0

nC

•

Avalanche Rated

7.9

m

Ω

•

Pb-Free Terminal Plating

Drain-to-Source On-Resistance

5.9

m

Ω

•

RoHS Compliant

Threshold Voltage

1.5

V

•

Halogen Free

•

SON 5 mm × 6 mm Plastic Package

.

Ordering Information(1)

2 Applications

Device

Media

Qty

Package

Ship

CSD17578Q5A

13-Inch Reel

2500

•

Point-of-Load Synchronous Buck Converter for

SON 5 x 6 mm

Tape and

Plastic Package

Reel

CSD17578Q5AT

7-Inch Reel

250

Applications in Networking, Telecom, and

Computing Systems

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

•

Optimized for Control FET Applications

Absolute Maximum Ratings

3 Description

VALUE

UNIT

This 30 V, 5.9 m

Ω, SON 5 mm x 6 mm NexFET™

Drain-to-Source Voltage

30

V

power MOSFET is designed to minimize losses in

Gate-to-Source Voltage

±20

V

power conversion applications.

Continuous Drain Current (Package limited)

25

Top View

Continuous Drain Current (Silicon limited),

59

A

Continuous Drain Current(1)

16

Pulsed Drain Current(2)

132

A

Power Dissipation(1)

3.1

W

42

Operating Junction and

–55 to 150

°C

Storage Temperature Range

Avalanche Energy, single pulse

23

mJ

.

inch thick FR4 PCB.

.

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.