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CSD25202W15 Datasheet(PDF) 1 Page - Texas Instruments |
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CSD25202W15 Datasheet(HTML) 1 Page - Texas Instruments |
1 / 15 page 10 14 18 22 26 30 34 38 42 46 50 0 1 2 3 4 5 6 − V GS - Gate-to- Source Voltage (V) TC = 25°C,I D = −2A TC = 125°C,I D = −2A G001 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 1 2 3 4 5 6 Qg - Gate Charge (nC) ID = −2A VDS = −10V G001 Source Gate Drain P0117-01 D D D D S S S S G Pin A1 Indicator Top View Symbol Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD25202W15 SLPS508A – JUNE 2014 – REVISED JULY 2014 CSD25202W15 20-V P-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Low-Resistance TA = 25°C TYPICAL VALUE UNIT • Small Footprint 1.5 mm × 1.5 mm VDS Drain-to-Source Voltage –20 V • Gate ESD Protection –3 kV Qg Gate Charge Total (–4.5 V) 5.8 nC Qgd Gate Charge Gate-to-Drain 0.8 nC • Pb Free VGS = –1.8 V 40 m Ω • RoHS Compliant RDS(on) Drain-to-Source On Resistance VGS = –2.5 V 26 m Ω • Halogen Free VGS = –4.5 V 21 m Ω • Gate-Source Voltage Clamp VGS(th) Threshold Voltage –0.75 V 2 Applications Ordering Information(1) • Battery Management Device Qty Media Package Ship • Battery Protection CSD25202W15 3000 7-Inch Reel 1.5-mm × 1.5-mm Tape and Wafer Level Reel CSD25202W15T 250 7-Inch Reel Package 3 Description (1) For all available packages, see the orderable addendum at This 21 m Ω, 20 V device is designed to deliver the the end of the data sheet. lowest on resistance and gate charge in a small 1.5 mm × 1.5 mm chip scale package with excellent Text Added For Spacing thermal characteristics in an ultra-low profile. Low on Absolute Maximum Ratings resistance coupled with the small footprint and low TA = 25°C VALUE UNIT profile make the device ideal for battery operated VDS Drain-to-Source Voltage –20 V space constrained applications. VGS Gate-to-Source Voltage –6 V Continuous Drain Current(1) –4 A ID Pulsed Drain Current(2) –38 A Continuous Gate Current(1) –0.5 A IG Pulsed Gate Current(2) –7 A PD Power Dissipation 0.5 W TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Range (1) Ball limited (2) Typical RθJA = 220ºC/W, pulse duration ≤100 µs, duty cycle ≤ 1% RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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Similar Description - CSD25202W15_15 |
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