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BLL8H1214L-250 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BLL8H1214L-250 Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page BLL8H1214L-250_1214LS-250 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 2 — 13 January 2015 7 of 13 NXP Semiconductors BLL8H1214L(S)-250 LDMOS L-band radar power transistor VDS = 50 V; tp = 300 s; = 10 %; IDq = 100 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz PL = 250 W; VDS = 50 V; tp = 300 s; = 10 %; IDq = 100 mA. Fig 5. Drain efficiency as a function of output power; typical values Fig 6. Power gain and drain efficiency as function of frequency; typical values PL = 250 W; VDS = 50 V; tp = 300 s; = 10 %; IDq = 100 mA. Fig 7. Input return loss as a function of frequency; typical value |
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