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2SC3465 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC3465 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com 2 Silicon NPN Power Transistors 2SC3465 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0; 1100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0; 7 V VCEsat Collector-emitter saturation voltage IC=6A;IB=1.2A 2.0 V VBEsat Base-emitter saturation voltage IC=6A;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=800V;IE=0 10 μA IEBO Emitter cut-off current VEB=7V;IC=0 10 μA hFE-1 DC current gain IC=0.8A ;VCE=5V 10 40 hFE-2 DC current gain IC=4A ;VCE=5V 10 fT Transition freuquency IC=0.8A ;VCE=10V 15 MHz COB Collector output capacitance IE=0 ;VCB=10V,f=1MHz 240 pF hFE-1 classifications K L M 10-20 15-30 20-40 |
Similar Part No. - 2SC3465_15 |
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Similar Description - 2SC3465_15 |
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