BUK9K32-100E_15 datasheet(6/13 Pages) PHILIPS

Part #	BUK9K32-100E

Description	Dual N-channel 100 V, 33 m logic level MOSFET

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NXP Semiconductors

BUK9K32-100E

Dual N-channel 100 V, 33 mΩ logic level MOSFET

BUK9K32-100E

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Product data sheet

10 December 2013

6 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

QGD

gate-drain charge

-

11

-

nC

Ciss

input capacitance

-

2377

3168

pF

Coss

output capacitance

-

153

184

pF

Crss

reverse transfer

capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Tj = 25 °C; Fig. 15

-

101

139

pF

td(on)

turn-on delay time

-

12.6

-

ns

tr

rise time

-

22

-

ns

td(off)

turn-off delay time

-

39.5

-

ns

tf

fall time

VDS = 80 V; RL = 15 Ω; VGS = 5 V;

RG(ext) = 5 Ω; ID = 5 A; Tj = 25 °C

-

23.1

-

ns

Source-drain diode FET1 and FET2

VSD

source-drain voltage

IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 16

-

0.78

1.2

V

trr

reverse recovery time

-

35.6

-

ns

Qr

recovered charge

IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 50 V; Tj = 25 °C

-

47.3

-

nC

003aal007

0

2

4

6

8

10

12

14

16

0

10

20

30

40

50

VGS (V)

RDSon

Fig. 6. Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aal006

0

0.5

1

1.5

2

2.5

3

0

5

10

15

20

25

30

VDS (V)

ID

(A)

2.2 V

2.4 V

2.6 V

VGS = 3 V

4.5 V

10 V

Tj = 25 °C; tp = 300 μs

Fig. 7. Output characteristics; drain current as a

function of drain-source voltage; typical values

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