BUK9K35-60E_15 datasheet(6/13 Pages) PHILIPS

Part #	BUK9K35-60E

Description	Dual N-channel 60 V, 35 m廓 logic level MOSFET

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NXP Semiconductors

BUK9K35-60E

Dual N-channel 60 V, 35 mΩ logic level MOSFET

BUK9K35-60E

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Product data sheet

12 November 2014

6 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Dynamic characteristics FET1 and FET2

QG(tot)

total gate charge

-

7.8

-

nC

QGS

gate-source charge

-

1.2

-

nC

QGD

gate-drain charge

ID = 5 A; VDS = 48 V; VGS = 5 V;

Tj = 25 °C; Fig. 14; Fig. 15

-

3

-

nC

Ciss

input capacitance

-

811

1081

pF

Coss

output capacitance

-

98

118

pF

Crss

reverse transfer

capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Tj = 25 °C; Fig. 16

-

51

70

pF

td(on)

turn-on delay time

-

7.1

-

ns

tr

rise time

-

11.3

-

ns

td(off)

turn-off delay time

-

14.9

-

ns

tf

fall time

VDS = 48 V; RL = 10 Ω; VGS = 5 V;

RG(ext) = 5 Ω; Tj = 25 °C; ID = 5 A

-

10.6

-

ns

Source-drain diode FET1 and FET2

VSD

source-drain voltage

IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 17

-

0.78

1.2

V

trr

reverse recovery time

-

17.6

-

ns

Qr

recovered charge

IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 30 V; Tj = 25 °C

-

12.1

-

nC

003aaj563

0

10

20

30

40

0

10

20

30

ID(A)

gfs

(S)

Fig. 6. Forward transconductance as a function of

drain current; typical values

003aaj564

0

20

40

60

80

0

2

4

6

8

VGS(V)

ID

(A)

Tj = 25 °C

Tj = 175 °C

Fig. 7. Transfer Characteristic: drain current as a

function of gate-source voltage; typical values

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