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BUK7E2R6-60E Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK7E2R6-60E Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 13 page NXP Semiconductors BUK7E2R6-60E N-channel TrenchMOS standard level FET BUK7E2R6-60E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 11 September 2012 8 / 13 003aag814 0 0.6 1.2 1.8 2.4 -60 0 60 120 180 Tj (°C) a Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) Fig. 13. Gate charge waveform definitions 003aaf501 0 2 4 6 8 10 0 50 100 150 200 QG (nC) VGS (V) VDS = 48 V 14 V Tj = 25 °C; ID = 25 A Fig. 14. Gate-source voltage as a function of gate charge; typical values 003aaf497 10 102 103 104 105 10-1 1 10 102 VDS (V) C (pF) Ciss Crss Coss VGS = 0 V; f = 1 MHz Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values |
Similar Part No. - BUK7E2R6-60E_15 |
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Similar Description - BUK7E2R6-60E_15 |
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