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BUK9Y153-100E Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK9Y153-100E Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page NXP Semiconductors BUK9Y153-100E N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 BUK9Y153-100E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 27 June 2014 7 / 13 003aai767 0 0.5 1 1.5 2 2.5 3 3.5 4 0 3.2 6.4 9.6 12.8 16 VGS (V) ID ID (A) (A) Tj = 25°C Tj = 25°C 175°C 175°C Fig. 8. Transfer characteristics; drain current as a function of gate-source voltage; typical values 003aah025 0 0.5 1 1.5 2 2.5 3 -60 0 60 120 180 Tj (°C) VGS(th) (V) max typ min Fig. 9. Gate-source threshold voltage as a function of junction temperature 003aah026 10-6 10-5 10-4 10-3 10-2 10-1 0 1 2 3 VGS (V) ID (A) max typ min Fig. 10. Sub-threshold drain current as a function of gate-source voltage 003aai770 0 2 4 6 8 10 0 50 100 150 200 250 ID (A) RDSon RDSon (mΩ) (mΩ) 2.8 V 2.8 V 3 V 3 V 3.5 V 3.5 V 4.5 V 4.5 V 10 V 10 V Tj = 25 °C; tp = 300 μs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values |
Similar Part No. - BUK9Y153-100E_15 |
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Similar Description - BUK9Y153-100E_15 |
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