NXP Semiconductors

BUK9Y153-100E

N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56

BUK9Y153-100E

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Product data sheet

27 June 2014

7 / 13

003aai767

0

0.5

1

1.5

2

2.5

3

3.5

4

0

3.2

6.4

9.6

12.8

16

(A)

(A)

175°C

175°C

Fig. 8. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

003aah025

0

0.5

1

1.5

2

2.5

3

-60

0

60

120

180

(V)

max

typ

min

Fig. 9. Gate-source threshold voltage as a function of

junction temperature

003aah026

0

1

2

3

(A)

max

typ

min

Fig. 10. Sub-threshold drain current as a function of

gate-source voltage

003aai770

0

2

4

6

8

10

0

50

100

150

200

250

(mΩ)

(mΩ)

2.8 V

2.8 V

3 V

3 V

3.5 V

3.5 V

4.5 V

4.5 V

10 V

10 V

Fig. 11. Drain-source on-state resistance as a function

of drain current; typical values