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BUK953R2-40B Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK953R2-40B Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 13 page NXP Semiconductors BUK953R2-40B N-channel TrenchMOS logic level FET BUK953R2-40B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 17 April 2014 3 / 13 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V VDGR drain-gate voltage RGS = 20 kΩ - 40 V VGS gate-source voltage -15 15 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 300 W Tmb = 25 °C; VGS = 5 V; Fig. 2; Fig. 3 [1] - 222 A Tmb = 100 °C; VGS = 5 V; Fig. 2 [2] - 100 A ID drain current Tmb = 25 °C; VGS = 5 V; Fig. 2; Fig. 3 [2] - 100 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3 - 888 A Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode [1] - 222 A IS source current Tmb = 25 °C [2] - 100 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 888 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped - 1.2 J [1] Current is limited by power dissipation chip rating. [2] All individual parts of device must be ≤ 175 °C to achieve maximum current rating. |
Similar Part No. - BUK953R2-40B_15 |
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Similar Description - BUK953R2-40B_15 |
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