BUK953R2-40B_15 datasheet(3/13 Pages) PHILIPS

Part #	BUK953R2-40B

Description	N-channel TrenchMOS logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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NXP Semiconductors

BUK953R2-40B

N-channel TrenchMOS logic level FET

BUK953R2-40B

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Product data sheet

17 April 2014

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7. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

40

V

VDGR

drain-gate voltage

RGS = 20 kΩ

-

40

V

VGS

gate-source voltage

-15

15

V

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

300

W

Tmb = 25 °C; VGS = 5 V; Fig. 2; Fig. 3

[1]

-

222

A

Tmb = 100 °C; VGS = 5 V; Fig. 2

[2]

-

100

A

ID

drain current

Tmb = 25 °C; VGS = 5 V; Fig. 2; Fig. 3

[2]

-

100

A

IDM

peak drain current

Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3

-

888

A

Tstg

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

Source-drain diode

[1]

-

222

A

IS

source current

Tmb = 25 °C

[2]

-

100

A

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

-

888

A

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-source

avalanche energy

ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω;

VGS = 5 V; Tj(init) = 25 °C; unclamped

-

1.2

J

[1] Current is limited by power dissipation chip rating.

[2] All individual parts of device must be ≤ 175 °C to achieve maximum current rating.

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